| Interface Defect Engineering of MoS2Monolayer: Interface Defect Engineering of a Large Scale CVD Grown MoS2Monolayer via Residual Sodium at the SiO2/Si Substrate | |||||
| 작성자 | 전** | 작성일 | 2021-11-24 | 조회수 | 128 |
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- NaCl 촉매제를 이용한 화학기상증착법으로 성장한 대면적 균일한 단일층 n-형 MoS2의 아래층 황원자 공극의 결함들을 SiO2 기판에 잔류하는 Na 양이온을 전기적으로 이동하여 치유하는 결과를 출간하였다.
Interface Defect Engineering of MoS2Monolayer: Interface Defect Engineering of a Large?Scale CVD?Grown MoS2Monolayer via Residual Sodium at the SiO2/Si Substrate, Advanced Materials Interfaces, 8, 2170080 (2021) DOI : 10.1002/admi.202170080 Abstract In article number 2100428, Sang Wook Han, Soon Cheol Hong, and co-workers uncover that the residual Na cations at the SiO2 substrate during a NaCl-assisted chemical vapor deposition-growth process induce the n-type doping into the large-scale supported uniform MoS2 monolayer. Furthermore, the residual Na cations are electrically moved toward the bottom side of the MoS2 monolayer to cure the interfacial sulfur vacancy defects.
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